Magnetocapacitance of magnetically strained multilayered thin films

•We suggests the possibility of enhanced magnetocapacitance under magnetic field.•We fabricated CoFe2O4/BaTiO3/CoFe2O4 sandwich-type multilayered thin films by PLD.•With and without magnetic field, the electric potential and capacitance was changed. We studied on magnetoelectric behaviors of magneti...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2019-07, Vol.481, p.136-139
Hauptverfasser: Seo, Hye young, Shim, In-Bo
Format: Artikel
Sprache:eng
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Zusammenfassung:•We suggests the possibility of enhanced magnetocapacitance under magnetic field.•We fabricated CoFe2O4/BaTiO3/CoFe2O4 sandwich-type multilayered thin films by PLD.•With and without magnetic field, the electric potential and capacitance was changed. We studied on magnetoelectric behaviors of magnetically strained magnetostrictive materials-ferroelectric materials-magnetostrictive materials sandwich-type multilayered thin films. The sandwich-type multilayered thin films were deposited on Pt substrates by PLD system with a KrF excimer laser (λ = 248 nm). In particular, thin films were studied for their crystal structure and surface/interface microstructure as well as magnetic and electrical properties. The experimentally measured results have proved that saturated magnetizations (Ms) of CoFe2O4 (20 nm, 20 nm, 200 nm)/BaTiO3 (200 nm, 100 nm, 200 nm)/CoFe2O4 (20 nm, 20 nm, 200 nm) sandwich-type multilayered thin films are measured as 23.58 emu/cm3, 38.52 emu/cm3, 103.71 emu/cm3 and the capacitance of those increased more under the magnetic field (1000 Oe) than zero field by 2.4%, 7.8%, 11.5% respectively. Our work suggests the possibility of enhanced magnetocapacitance under magnetic field by controlling the interfacial compressive/tensile stress of thin film. As a results we have compared the experimental and theoretical values depending on the parameters such as thickness and potential distribution of magnetostrictive materials through the simulation program COMSOL physics.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.03.012