Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2019-05, Vol.40 (5), p.666-669
Hauptverfasser:	Boige, F., Tremouilles, D., Richardeau, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC MOSFET Circuits Current measurement Engineering Sciences Fowler-Nordheim gate oxide Logic gates Micro and nanotechnologies Microelectronics MOSFET MOSFETs Schottky emission Semiconductor device modeling Short circuits short-circuit Silicon Silicon carbide Temperature measurement Tunneling
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Beschreibung
Zusammenfassung:	During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2019.2896939