High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition
Metal-insulator-metal (MIM) capacitors fabricated with Zr-Sn-Ti-O dielectrics by the plasma-enhanced atomic layer deposition (PEALD) were first demonstrated. By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were opt...
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| Veröffentlicht in: | IEEE electron device letters 2019-05, Vol.40 (5), p.682-685 |
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| creator | Fang, Chang Wang, Mei Han, Ping Cao, Yan-Qiang Wu, Di Li, Ai-Dong |
| description | Metal-insulator-metal (MIM) capacitors fabricated with Zr-Sn-Ti-O dielectrics by the plasma-enhanced atomic layer deposition (PEALD) were first demonstrated. By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were optimized to meet the requirements of system-level chips for the high-density MIM capacitors. When the cycle ratio of ZrO 2 :SnO 2 :TiO 2 is 2:10:2, the sample of Zr 0.45 Sn 0.06 Ti 0.48 O 2 shows the best electrical properties: a capacitance density of 10.8 fF/ \mu \text{m}^{{2}} , a quadratic voltage linearity of −83 ppm/V 2 , a leakage current density of 5\times 10^{{-7}} A/cm 2 at 3 V, a breakdown voltage of 6.8 V, and a temperature linearity coefficient of 95.1 ppm/°C. These results indicate that PEALD Zr-Sn-Ti-O dielectrics are promising candidates for future high-density MIM capacitor applications in radio frequency and analog-/mixed-signal integrated circuits. |
| doi_str_mv | 10.1109/LED.2019.2907981 |
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By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were optimized to meet the requirements of system-level chips for the high-density MIM capacitors. When the cycle ratio of ZrO 2 :SnO 2 :TiO 2 is 2:10:2, the sample of Zr 0.45 Sn 0.06 Ti 0.48 O 2 shows the best electrical properties: a capacitance density of 10.8 fF/<inline-formula> <tex-math notation="LaTeX">\mu \text{m}^{{2}} </tex-math></inline-formula>, a quadratic voltage linearity of −83 ppm/V 2 , a leakage current density of <inline-formula> <tex-math notation="LaTeX">5\times 10^{{-7}} </tex-math></inline-formula> A/cm 2 at 3 V, a breakdown voltage of 6.8 V, and a temperature linearity coefficient of 95.1 ppm/°C. These results indicate that PEALD Zr-Sn-Ti-O dielectrics are promising candidates for future high-density MIM capacitor applications in radio frequency and analog-/mixed-signal integrated circuits.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2907981</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analog circuits ; Atomic layer epitaxy ; Capacitance ; Capacitors ; Cycle ratio ; Dielectrics ; Electric potential ; Electrical properties ; High-k dielectric materials ; Integrated circuits ; Leakage current ; Leakage currents ; Linearity ; MIM capacitors ; PEALD ; Tin dioxide ; Titanium ; Titanium dioxide ; Zirconium dioxide ; Zr-Sn-Ti-O</subject><ispartof>IEEE electron device letters, 2019-05, Vol.40 (5), p.682-685</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-8d779b87221f4dfaec8d3bd48498f79ddc57084b60546a794be4134a42ec3ff23</citedby><cites>FETCH-LOGICAL-c291t-8d779b87221f4dfaec8d3bd48498f79ddc57084b60546a794be4134a42ec3ff23</cites><orcidid>0000-0003-3628-0393</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8676011$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8676011$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fang, Chang</creatorcontrib><creatorcontrib>Wang, Mei</creatorcontrib><creatorcontrib>Han, Ping</creatorcontrib><creatorcontrib>Cao, Yan-Qiang</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><creatorcontrib>Li, Ai-Dong</creatorcontrib><title>High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[Metal-insulator-metal (MIM) capacitors fabricated with Zr-Sn-Ti-O dielectrics by the plasma-enhanced atomic layer deposition (PEALD) were first demonstrated. By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were optimized to meet the requirements of system-level chips for the high-density MIM capacitors. When the cycle ratio of ZrO 2 :SnO 2 :TiO 2 is 2:10:2, the sample of Zr 0.45 Sn 0.06 Ti 0.48 O 2 shows the best electrical properties: a capacitance density of 10.8 fF/<inline-formula> <tex-math notation="LaTeX">\mu \text{m}^{{2}} </tex-math></inline-formula>, a quadratic voltage linearity of −83 ppm/V 2 , a leakage current density of <inline-formula> <tex-math notation="LaTeX">5\times 10^{{-7}} </tex-math></inline-formula> A/cm 2 at 3 V, a breakdown voltage of 6.8 V, and a temperature linearity coefficient of 95.1 ppm/°C. These results indicate that PEALD Zr-Sn-Ti-O dielectrics are promising candidates for future high-density MIM capacitor applications in radio frequency and analog-/mixed-signal integrated circuits.]]></description><subject>Analog circuits</subject><subject>Atomic layer epitaxy</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Cycle ratio</subject><subject>Dielectrics</subject><subject>Electric potential</subject><subject>Electrical properties</subject><subject>High-k dielectric materials</subject><subject>Integrated circuits</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>Linearity</subject><subject>MIM capacitors</subject><subject>PEALD</subject><subject>Tin dioxide</subject><subject>Titanium</subject><subject>Titanium dioxide</subject><subject>Zirconium dioxide</subject><subject>Zr-Sn-Ti-O</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9LwzAYhoMoOKd3wUvAc2bSpvlxHJu6QccEt4uXkKbJzNiamnTC_ns7Njx9h_d53w8eAB4JHhGC5Uv5Oh1lmMhRJjGXglyBASkKgXDB8mswwJwSlBPMbsFdSluMCaWcDoCe-c03-rDRhbjXjbFwMV_AiW618V2ICa6TbzbwK6LPBq08WsKptztruuhNglMb_a-toYthD8dd2HsDS320sU_akHznQ3MPbpzeJftwuUOwfntdTWaoXL7PJ-MSmUySDomac1kJnmXE0dppa0SdVzUVVArHZV2bgmNBK4YLyjSXtLKU5FTTzJrcuSwfgufzbhvDz8GmTm3DITb9S9VvFphhKVhP4TNlYkgpWqfa6Pc6HhXB6iRS9SLVSaS6iOwrT-eKt9b-44JxhgnJ_wBM7G3W</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Fang, Chang</creator><creator>Wang, Mei</creator><creator>Han, Ping</creator><creator>Cao, Yan-Qiang</creator><creator>Wu, Di</creator><creator>Li, Ai-Dong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3628-0393</orcidid></search><sort><creationdate>20190501</creationdate><title>High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition</title><author>Fang, Chang ; Wang, Mei ; Han, Ping ; Cao, Yan-Qiang ; Wu, Di ; Li, Ai-Dong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-8d779b87221f4dfaec8d3bd48498f79ddc57084b60546a794be4134a42ec3ff23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Analog circuits</topic><topic>Atomic layer epitaxy</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>Cycle ratio</topic><topic>Dielectrics</topic><topic>Electric potential</topic><topic>Electrical properties</topic><topic>High-k dielectric materials</topic><topic>Integrated circuits</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>Linearity</topic><topic>MIM capacitors</topic><topic>PEALD</topic><topic>Tin dioxide</topic><topic>Titanium</topic><topic>Titanium dioxide</topic><topic>Zirconium dioxide</topic><topic>Zr-Sn-Ti-O</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fang, Chang</creatorcontrib><creatorcontrib>Wang, Mei</creatorcontrib><creatorcontrib>Han, Ping</creatorcontrib><creatorcontrib>Cao, Yan-Qiang</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><creatorcontrib>Li, Ai-Dong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fang, Chang</au><au>Wang, Mei</au><au>Han, Ping</au><au>Cao, Yan-Qiang</au><au>Wu, Di</au><au>Li, Ai-Dong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-05-01</date><risdate>2019</risdate><volume>40</volume><issue>5</issue><spage>682</spage><epage>685</epage><pages>682-685</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[Metal-insulator-metal (MIM) capacitors fabricated with Zr-Sn-Ti-O dielectrics by the plasma-enhanced atomic layer deposition (PEALD) were first demonstrated. By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were optimized to meet the requirements of system-level chips for the high-density MIM capacitors. When the cycle ratio of ZrO 2 :SnO 2 :TiO 2 is 2:10:2, the sample of Zr 0.45 Sn 0.06 Ti 0.48 O 2 shows the best electrical properties: a capacitance density of 10.8 fF/<inline-formula> <tex-math notation="LaTeX">\mu \text{m}^{{2}} </tex-math></inline-formula>, a quadratic voltage linearity of −83 ppm/V 2 , a leakage current density of <inline-formula> <tex-math notation="LaTeX">5\times 10^{{-7}} </tex-math></inline-formula> A/cm 2 at 3 V, a breakdown voltage of 6.8 V, and a temperature linearity coefficient of 95.1 ppm/°C. These results indicate that PEALD Zr-Sn-Ti-O dielectrics are promising candidates for future high-density MIM capacitor applications in radio frequency and analog-/mixed-signal integrated circuits.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2019.2907981</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-3628-0393</orcidid></addata></record> |
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| subjects | Analog circuits Atomic layer epitaxy Capacitance Capacitors Cycle ratio Dielectrics Electric potential Electrical properties High-k dielectric materials Integrated circuits Leakage current Leakage currents Linearity MIM capacitors PEALD Tin dioxide Titanium Titanium dioxide Zirconium dioxide Zr-Sn-Ti-O |
| title | High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition |
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