High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition

Metal-insulator-metal (MIM) capacitors fabricated with Zr-Sn-Ti-O dielectrics by the plasma-enhanced atomic layer deposition (PEALD) were first demonstrated. By changing the pulse cycle ratio and cycle number of PEALD, the comprehensive electrical properties of the Zr-Sn-Ti-O MIM capacitors were optimized to meet the requirements of system-level chips for the high-density MIM capacitors. When the cycle ratio of ZrO 2 :SnO 2 :TiO 2 is 2:10:2, the sample of Zr 0.45 Sn 0.06 Ti 0.48 O 2 shows the best electrical properties: a capacitance density of 10.8 fF/ \mu \text{m}^{{2}} , a quadratic voltage linearity of −83 ppm/V 2 , a leakage current density of 5\times 10^{{-7}} A/cm 2 at 3 V, a breakdown voltage of 6.8 V, and a temperature linearity coefficient of 95.1 ppm/°C. These results indicate that PEALD Zr-Sn-Ti-O dielectrics are promising candidates for future high-density MIM capacitor applications in radio frequency and analog-/mixed-signal integrated circuits.