Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

The implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10 14 cm –2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and sp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-02, Vol.53 (2), p.153-155
Hauptverfasser: Sobolev, N. A., Aleksandrov, O. V., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Kalyadin, A. E., Parshin, E. O., Melesov, N. S.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphization
Annealing
Electronic Properties of Semiconductors
High temperature
Ion implantation
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Silicon
Single crystals
Technology
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10 14 cm –2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619020222