On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method

The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5 . 0 μm (0 . 25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.