Investigation into the Memristor Effect in Nanocrystalline ZnO Films
The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating a nanocrystalline zinc-oxide film by pulsed laser...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019, Vol.53 (1), p.72-77 |
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| creator | Smirnov, V. A. Tominov, R. V. Avilov, V. I. Alyabieva, N. I. Vakulov, Z. E. Zamburg, E. G. Khakhulin, D. A. Ageev, O. A. |
| description | The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating a nanocrystalline zinc-oxide film by pulsed laser deposition in a broad range of electrical (resistivity from 1.44 × 10
–5
to 8.06 × 10
–1
Ω cm) and morphological (roughness from 0.43 ± 0.32 to 6.36 ± 0.38 nm) parameters due to the use of post-growth annealing in oxygen (pressure 10
–1
and 10
–3
Torr, temperature 300 and 800°C, and duration from 1 to 10 h) is presented. It is shown that a nanocrystalline zinc-oxide film 58 ± 2 nm in thickness manifests a stable memristor effect slightly dependent on its morphology—applying a voltage of –2.5 and +4 V leads to switching between states with the resistance 3.3 ± 1.1 × 10
9
and 8.1 ± 3.4 × 10
7
Ω, respectively. These results can be used when developing designs and production processes of resistive random-access memory (RRAM) units based on the memristor effect as well as optoelectronics, microelectronics, and nanoelectronics and nanosystem devices. |
| doi_str_mv | 10.1134/S1063782619010202 |
| format | Article |
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–5
to 8.06 × 10
–1
Ω cm) and morphological (roughness from 0.43 ± 0.32 to 6.36 ± 0.38 nm) parameters due to the use of post-growth annealing in oxygen (pressure 10
–1
and 10
–3
Torr, temperature 300 and 800°C, and duration from 1 to 10 h) is presented. It is shown that a nanocrystalline zinc-oxide film 58 ± 2 nm in thickness manifests a stable memristor effect slightly dependent on its morphology—applying a voltage of –2.5 and +4 V leads to switching between states with the resistance 3.3 ± 1.1 × 10
9
and 8.1 ± 3.4 × 10
7
Ω, respectively. These results can be used when developing designs and production processes of resistive random-access memory (RRAM) units based on the memristor effect as well as optoelectronics, microelectronics, and nanoelectronics and nanosystem devices.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782619010202</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Annealing ; Composite Semiconductors ; Electrical properties ; Magnetic Materials ; Magnetism ; Memristors ; Microcrystalline ; Morphology ; Nanocrystalline ; Nanocrystals ; Nanoelectronics ; Optoelectronics ; Oxide coatings ; Physics ; Physics and Astronomy ; Porous ; Pulsed laser deposition ; Pulsed lasers ; Random access memory ; Zinc oxide</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2019, Vol.53 (1), p.72-77</ispartof><rights>Pleiades Publishing, Ltd. 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-29263d2d6280efb044c652aa6e651885900104db2e2196d30a5e56752623f2823</citedby><cites>FETCH-LOGICAL-c316t-29263d2d6280efb044c652aa6e651885900104db2e2196d30a5e56752623f2823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782619010202$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782619010202$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Smirnov, V. A.</creatorcontrib><creatorcontrib>Tominov, R. V.</creatorcontrib><creatorcontrib>Avilov, V. I.</creatorcontrib><creatorcontrib>Alyabieva, N. I.</creatorcontrib><creatorcontrib>Vakulov, Z. E.</creatorcontrib><creatorcontrib>Zamburg, E. G.</creatorcontrib><creatorcontrib>Khakhulin, D. A.</creatorcontrib><creatorcontrib>Ageev, O. A.</creatorcontrib><title>Investigation into the Memristor Effect in Nanocrystalline ZnO Films</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating a nanocrystalline zinc-oxide film by pulsed laser deposition in a broad range of electrical (resistivity from 1.44 × 10
–5
to 8.06 × 10
–1
Ω cm) and morphological (roughness from 0.43 ± 0.32 to 6.36 ± 0.38 nm) parameters due to the use of post-growth annealing in oxygen (pressure 10
–1
and 10
–3
Torr, temperature 300 and 800°C, and duration from 1 to 10 h) is presented. It is shown that a nanocrystalline zinc-oxide film 58 ± 2 nm in thickness manifests a stable memristor effect slightly dependent on its morphology—applying a voltage of –2.5 and +4 V leads to switching between states with the resistance 3.3 ± 1.1 × 10
9
and 8.1 ± 3.4 × 10
7
Ω, respectively. These results can be used when developing designs and production processes of resistive random-access memory (RRAM) units based on the memristor effect as well as optoelectronics, microelectronics, and nanoelectronics and nanosystem devices.</description><subject>Annealing</subject><subject>Composite Semiconductors</subject><subject>Electrical properties</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Memristors</subject><subject>Microcrystalline</subject><subject>Morphology</subject><subject>Nanocrystalline</subject><subject>Nanocrystals</subject><subject>Nanoelectronics</subject><subject>Optoelectronics</subject><subject>Oxide coatings</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Random access memory</subject><subject>Zinc oxide</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UE1LAzEQDaJgrf4AbwHPqzOTTbo5Sm21oPagXrws6W62btlma5IK_femVPAgnubB-5jHY-wS4RpR5DcvCEqMClKoAYGAjtgAQUOm8pE-3mMlsj1_ys5CWAEgFjIfsLuZ-7IhtksT297x1sWexw_Ln-zatyH2nk-axlYxMfzZuL7yuxBN17XO8nc359O2W4dzdtKYLtiLnztkb9PJ6_ghe5zfz8a3j1klUMWMNClRU62oANssIM8rJckYZZXEopA6tYK8XpAl1KoWYKSVaiRJkWioIDFkV4fcje8_t6l2ueq33qWXJREK1FoQJBUeVJXvQ_C2KTe-XRu_KxHK_Vjln7GShw6ekLRuaf1v8v-mb20UaOQ</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Smirnov, V. A.</creator><creator>Tominov, R. V.</creator><creator>Avilov, V. I.</creator><creator>Alyabieva, N. I.</creator><creator>Vakulov, Z. E.</creator><creator>Zamburg, E. G.</creator><creator>Khakhulin, D. A.</creator><creator>Ageev, O. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2019</creationdate><title>Investigation into the Memristor Effect in Nanocrystalline ZnO Films</title><author>Smirnov, V. A. ; Tominov, R. V. ; Avilov, V. I. ; Alyabieva, N. I. ; Vakulov, Z. E. ; Zamburg, E. G. ; Khakhulin, D. A. ; Ageev, O. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-29263d2d6280efb044c652aa6e651885900104db2e2196d30a5e56752623f2823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Annealing</topic><topic>Composite Semiconductors</topic><topic>Electrical properties</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Memristors</topic><topic>Microcrystalline</topic><topic>Morphology</topic><topic>Nanocrystalline</topic><topic>Nanocrystals</topic><topic>Nanoelectronics</topic><topic>Optoelectronics</topic><topic>Oxide coatings</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Porous</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Random access memory</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smirnov, V. A.</creatorcontrib><creatorcontrib>Tominov, R. V.</creatorcontrib><creatorcontrib>Avilov, V. I.</creatorcontrib><creatorcontrib>Alyabieva, N. I.</creatorcontrib><creatorcontrib>Vakulov, Z. E.</creatorcontrib><creatorcontrib>Zamburg, E. G.</creatorcontrib><creatorcontrib>Khakhulin, D. A.</creatorcontrib><creatorcontrib>Ageev, O. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Smirnov, V. A.</au><au>Tominov, R. V.</au><au>Avilov, V. I.</au><au>Alyabieva, N. I.</au><au>Vakulov, Z. E.</au><au>Zamburg, E. G.</au><au>Khakhulin, D. A.</au><au>Ageev, O. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation into the Memristor Effect in Nanocrystalline ZnO Films</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2019</date><risdate>2019</risdate><volume>53</volume><issue>1</issue><spage>72</spage><epage>77</epage><pages>72-77</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating a nanocrystalline zinc-oxide film by pulsed laser deposition in a broad range of electrical (resistivity from 1.44 × 10
–5
to 8.06 × 10
–1
Ω cm) and morphological (roughness from 0.43 ± 0.32 to 6.36 ± 0.38 nm) parameters due to the use of post-growth annealing in oxygen (pressure 10
–1
and 10
–3
Torr, temperature 300 and 800°C, and duration from 1 to 10 h) is presented. It is shown that a nanocrystalline zinc-oxide film 58 ± 2 nm in thickness manifests a stable memristor effect slightly dependent on its morphology—applying a voltage of –2.5 and +4 V leads to switching between states with the resistance 3.3 ± 1.1 × 10
9
and 8.1 ± 3.4 × 10
7
Ω, respectively. These results can be used when developing designs and production processes of resistive random-access memory (RRAM) units based on the memristor effect as well as optoelectronics, microelectronics, and nanoelectronics and nanosystem devices.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782619010202</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Composite Semiconductors Electrical properties Magnetic Materials Magnetism Memristors Microcrystalline Morphology Nanocrystalline Nanocrystals Nanoelectronics Optoelectronics Oxide coatings Physics Physics and Astronomy Porous Pulsed laser deposition Pulsed lasers Random access memory Zinc oxide |
| title | Investigation into the Memristor Effect in Nanocrystalline ZnO Films |
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