EMF Induced in a p–n Junction under a Strong Microwave Field and Light
The effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and...
Gespeichert in:
Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-03, Vol.53 (3), p.375-378 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The effect of a strong electromagnetic field on currents and electromotive forces in a
p
–
n
junction is considered. It is shown that a
p
–
n
junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a
p
–
n
junction placed into a strong microwave (UHF) electromagnetic field. |
---|---|
ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782619030060 |