EMF Induced in a p–n Junction under a Strong Microwave Field and Light

The effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-03, Vol.53 (3), p.375-378
Hauptverfasser: Gulyamov, G., Erkaboev, U. I., Sharibaev, N. Yu, Gulyamov, A. G.
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Sprache:eng
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Zusammenfassung:The effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p – n junction placed into a strong microwave (UHF) electromagnetic field.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619030060