Effect of Nb-doping on the structural and electrical properties of Ba0.97La0.02Ti1-xNb4x/5O3 ceramics at room temperature synthesized by molten-salt method

We, herein, report on the structural and electrical properties of Ba0,97La0.02Ti1-xNb4x/5O3 ceramics prepared by the molten-salt method. The XRD patterns of the samples at room temperature showed a single perovskite phase having a tetragonal structure with a P4/mmm space group. The electrical proper...

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Veröffentlicht in:Journal of alloys and compounds 2019-05, Vol.784, p.204-212
Hauptverfasser: Jebli, M., Rayssi, Ch, Hamdaoui, N., Rabaoui, S., Dhahri, J., Ben Henda, M., Shaarany, I.
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Sprache:eng
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Zusammenfassung:We, herein, report on the structural and electrical properties of Ba0,97La0.02Ti1-xNb4x/5O3 ceramics prepared by the molten-salt method. The XRD patterns of the samples at room temperature showed a single perovskite phase having a tetragonal structure with a P4/mmm space group. The electrical properties were studied by complex impedance spectroscopy in the frequency range (1–107Hz) at room temperature. The real and imaginary parts of impedance decreased with increasing Nb concentration. The complex impedance plot exhibited a single impedance semicircle for each compound, identified over the high and medium frequencies followed by a linear section, at low frequency, is explained by Warburg's element. The study of the normalization curves of impedance and electrical modulus showed a mismatch of both peaks, which suggests the presence of short-range motion of charge carriers. The electrical conductivity decreased with increasing niobium amount and the experimental data were fitted using Jonscher's universal power law. The exponent n is slightly superior to 1, indicating that the hopping occurs between neighboring sites. •Ba0.97La0.02Ti1-xNb4x/5O3 (x = 0 and 0.05) were prepared by molten-salt method.•The compounds crystallize in the tetragonal structure with P4/mmm space group.•The existence of Warburg element in the equivalent circuit.•The normalization curves proves the presence of short-range motion of charge carriers.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.01.014