Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells

Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells

In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport...

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Veröffentlicht in:Science China materials 2019-01, Vol.62 (6), p.797-802
Hauptverfasser: Xue, Min, Guo, Linbao, Yu, Qing, Duan, Biwen, Shi, Jiangjian, Wu, Huijue, Luo, Yanhong, Li, Dongmei, Meng, Qingbo
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Sprache:eng
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Carrier transport
Energy conversion efficiency
Molybdenum oxides
Molybdenum trioxide
Photovoltaic cells
Solar cells
Substrates
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container_end_page 802
container_issue 6
container_start_page 797
container_title Science China materials
container_volume 62
creator Xue, Min
Guo, Linbao
Yu, Qing
Duan, Biwen
Shi, Jiangjian
Wu, Huijue
Luo, Yanhong
Li, Dongmei
Meng, Qingbo
description In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.
doi_str_mv 10.1007/s40843-018-9381-1
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2202400835</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2202400835</sourcerecordid><originalsourceid>FETCH-proquest_journals_22024008353</originalsourceid><addsrcrecordid>eNqNisFOAyEURYnRxEb7Ae5e4hp9D5gK66bGjXExXblpKDItlcAITNL-vbPwA1zdk3MuYw-ET4T48lwVaiU5kuZGauJ0xRaCjOGqQ7qeGU3HtRCrW7as9YSItOqIjF6wwyYdbXIhHWBv3TeE1HwZrAs2gsupWddgf5k1r6FNMBY_2uK_4D1_SGjHkCDaiy8w5ALrSXymPvVwht4rfoaaoy3gfIz1nt0MNla__Ns79vi62a7f-Fjyz-Rr253yVNKcdkKgUIhadvJ_r18o7kz3</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2202400835</pqid></control><display><type>article</type><title>Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells</title><source>Alma/SFX Local Collection</source><source>SpringerLink Journals - AutoHoldings</source><creator>Xue, Min ; Guo, Linbao ; Yu, Qing ; Duan, Biwen ; Shi, Jiangjian ; Wu, Huijue ; Luo, Yanhong ; Li, Dongmei ; Meng, Qingbo</creator><creatorcontrib>Xue, Min ; Guo, Linbao ; Yu, Qing ; Duan, Biwen ; Shi, Jiangjian ; Wu, Huijue ; Luo, Yanhong ; Li, Dongmei ; Meng, Qingbo</creatorcontrib><description>In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.</description><identifier>ISSN: 2095-8226</identifier><identifier>EISSN: 2199-4501</identifier><identifier>DOI: 10.1007/s40843-018-9381-1</identifier><language>eng</language><publisher>Heidelberg: Springer Nature B.V</publisher><subject>Carrier transport ; Energy conversion efficiency ; Molybdenum oxides ; Molybdenum trioxide ; Photovoltaic cells ; Solar cells ; Substrates</subject><ispartof>Science China materials, 2019-01, Vol.62 (6), p.797-802</ispartof><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Xue, Min</creatorcontrib><creatorcontrib>Guo, Linbao</creatorcontrib><creatorcontrib>Yu, Qing</creatorcontrib><creatorcontrib>Duan, Biwen</creatorcontrib><creatorcontrib>Shi, Jiangjian</creatorcontrib><creatorcontrib>Wu, Huijue</creatorcontrib><creatorcontrib>Luo, Yanhong</creatorcontrib><creatorcontrib>Li, Dongmei</creatorcontrib><creatorcontrib>Meng, Qingbo</creatorcontrib><title>Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells</title><title>Science China materials</title><description>In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.</description><subject>Carrier transport</subject><subject>Energy conversion efficiency</subject><subject>Molybdenum oxides</subject><subject>Molybdenum trioxide</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Substrates</subject><issn>2095-8226</issn><issn>2199-4501</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqNisFOAyEURYnRxEb7Ae5e4hp9D5gK66bGjXExXblpKDItlcAITNL-vbPwA1zdk3MuYw-ET4T48lwVaiU5kuZGauJ0xRaCjOGqQ7qeGU3HtRCrW7as9YSItOqIjF6wwyYdbXIhHWBv3TeE1HwZrAs2gsupWddgf5k1r6FNMBY_2uK_4D1_SGjHkCDaiy8w5ALrSXymPvVwht4rfoaaoy3gfIz1nt0MNla__Ns79vi62a7f-Fjyz-Rr253yVNKcdkKgUIhadvJ_r18o7kz3</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Xue, Min</creator><creator>Guo, Linbao</creator><creator>Yu, Qing</creator><creator>Duan, Biwen</creator><creator>Shi, Jiangjian</creator><creator>Wu, Huijue</creator><creator>Luo, Yanhong</creator><creator>Li, Dongmei</creator><creator>Meng, Qingbo</creator><general>Springer Nature B.V</general><scope/></search><sort><creationdate>20190101</creationdate><title>Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells</title><author>Xue, Min ; Guo, Linbao ; Yu, Qing ; Duan, Biwen ; Shi, Jiangjian ; Wu, Huijue ; Luo, Yanhong ; Li, Dongmei ; Meng, Qingbo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_22024008353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Carrier transport</topic><topic>Energy conversion efficiency</topic><topic>Molybdenum oxides</topic><topic>Molybdenum trioxide</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xue, Min</creatorcontrib><creatorcontrib>Guo, Linbao</creatorcontrib><creatorcontrib>Yu, Qing</creatorcontrib><creatorcontrib>Duan, Biwen</creatorcontrib><creatorcontrib>Shi, Jiangjian</creatorcontrib><creatorcontrib>Wu, Huijue</creatorcontrib><creatorcontrib>Luo, Yanhong</creatorcontrib><creatorcontrib>Li, Dongmei</creatorcontrib><creatorcontrib>Meng, Qingbo</creatorcontrib><jtitle>Science China materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xue, Min</au><au>Guo, Linbao</au><au>Yu, Qing</au><au>Duan, Biwen</au><au>Shi, Jiangjian</au><au>Wu, Huijue</au><au>Luo, Yanhong</au><au>Li, Dongmei</au><au>Meng, Qingbo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells</atitle><jtitle>Science China materials</jtitle><date>2019-01-01</date><risdate>2019</risdate><volume>62</volume><issue>6</issue><spage>797</spage><epage>802</epage><pages>797-802</pages><issn>2095-8226</issn><eissn>2199-4501</eissn><abstract>In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.</abstract><cop>Heidelberg</cop><pub>Springer Nature B.V</pub><doi>10.1007/s40843-018-9381-1</doi></addata></record>
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subjects Carrier transport
Energy conversion efficiency
Molybdenum oxides
Molybdenum trioxide
Photovoltaic cells
Solar cells
Substrates
title Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T17%3A52%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancing%20back%20interfacial%20contact%20by%20in-situ%20prepared%20MoO3%20thin%20layer%20for%20Cu2ZnSnS%20x%20Se4-x%20solar%20cells&rft.jtitle=Science%20China%20materials&rft.au=Xue,%20Min&rft.date=2019-01-01&rft.volume=62&rft.issue=6&rft.spage=797&rft.epage=802&rft.pages=797-802&rft.issn=2095-8226&rft.eissn=2199-4501&rft_id=info:doi/10.1007/s40843-018-9381-1&rft_dat=%3Cproquest%3E2202400835%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2202400835&rft_id=info:pmid/&rfr_iscdi=true