Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells

Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells

In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport...

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Veröffentlicht in:Science China materials 2019-01, Vol.62 (6), p.797-802
Hauptverfasser: Xue, Min, Guo, Linbao, Yu, Qing, Duan, Biwen, Shi, Jiangjian, Wu, Huijue, Luo, Yanhong, Li, Dongmei, Meng, Qingbo
Format: Artikel
Sprache:eng
Schlagworte:
Carrier transport
Energy conversion efficiency
Molybdenum oxides
Molybdenum trioxide
Photovoltaic cells
Solar cells
Substrates
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Zusammenfassung:In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.
ISSN:2095-8226
2199-4501
DOI:10.1007/s40843-018-9381-1