Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method
In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investi...
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Veröffentlicht in: | Microelectronic engineering 2019-02, Vol.207, p.15-18 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at 500̊ C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed.
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•InGaN thin films were grown on n-type and p-type silicon substrates at varying substrate temperatures•The effects of substrate and temperature on the structural, morphological and optical properties were investigated•Substrate and temperature have a great influence on the structural, morphological and optical properties of the films |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2018.12.010 |