Effect of copper doping on the crystallization behavior of TiSbTe for fast-speed phase change memory

•The enhanced thermal stability is high enough for application.•SET/RESET operation of 5 ns is realized with large sensing margin.•The role of Cu in suppressing crystallisation was proved by XRD and TEM results. In this study, Ti-Sb-Te (TST) alloy doped with Cu has been proposed to enhance the phase...

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Veröffentlicht in:	Materials letters 2019-04, Vol.241, p.148-151
Hauptverfasser:	Zheng, Qianqian, Guo, Tianqi, Chen, Liangliang, Song, Sannian, Zhang, Xin, Yu, Wenlei, Zhu, Xiuwei, Shao, Hehong, Zheng, Wanting, zhang, Juan
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Computer memory Copper Crystallization Electrical properties Endurance Materials science Nanocomposite Phase transitions Rapid transition Tellurium Thermal stability Thin film
Online-Zugang:	Volltext
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