The Lateral Photovoltaic Effect in the Fe3O4/SiO2/p-Si Structure

We report on the results of the study of the lateral photovoltaic effect in the Fe3O4/SiO2/p-Si structure. It is found that maximum of the lateral photovoltage is localized near the measuring contacts and rapidly attenuates when the light spot moves away from them. Correspondence of the photovoltage sign to the conductivity type of the silicon substrate is achieved only taking into account the interface states at the SiO2/p-Si interface. The extreme dependence of the lateral photovoltage on the thickness of the Fe3O4 film is observed, which is due to the fact that the barrier height is laterally inhomogeneous at small thicknesses of magnetite film, whereas at higher thicknesses of the film the lateral photovoltaic effect is short-circuited by this film.