High-Power, High-Linearity, Heterogeneously Integrated III-V on Si MZI Modulators for RF Photonics Systems
In this paper, heterogeneously integrated III-V on silicon (III-V/Si) Mach-Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III-V/Si phase modulation sections in a Si MZI, and with a single-drive push-p...
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Veröffentlicht in: | IEEE photonics journal 2019-04, Vol.11 (2), p.1-10 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, heterogeneously integrated III-V on silicon (III-V/Si) Mach-Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III-V/Si phase modulation sections in a Si MZI, and with a single-drive push-pull operation provide a spurious-free dynamic range (SFDR) as high as 112 dB·Hz 2/3 at 10 GHz, comparable to commercial lithium niobate modulators. Optical power levels up to 100 mW into the modulator provide no degradation in device linearity, with modulators demonstrating typical SFDRs of 110 dB·Hz 2/3 . These III-V/Si MZI modulators, using a 500-nm ``thick'' Si layer for III-V integration, demonstrate applicability for high-SFDR analog fiber-optic links without need for an erbium-doped fiber amplifier. |
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ISSN: | 1943-0655 1943-0655 1943-0647 |
DOI: | 10.1109/JPHOT.2019.2903979 |