High-Power, High-Linearity, Heterogeneously Integrated III-V on Si MZI Modulators for RF Photonics Systems

In this paper, heterogeneously integrated III-V on silicon (III-V/Si) Mach-Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III-V/Si phase modulation sections in a Si MZI, and with a single-drive push-p...

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Veröffentlicht in:IEEE photonics journal 2019-04, Vol.11 (2), p.1-10
Hauptverfasser: Morton, Paul A., Morton, Michael J., Chong Zhang, Khurgin, Jacob B., Peters, Jon, Morton, Christopher D., Bowers, John E.
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Sprache:eng
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Zusammenfassung:In this paper, heterogeneously integrated III-V on silicon (III-V/Si) Mach-Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III-V/Si phase modulation sections in a Si MZI, and with a single-drive push-pull operation provide a spurious-free dynamic range (SFDR) as high as 112 dB·Hz 2/3 at 10 GHz, comparable to commercial lithium niobate modulators. Optical power levels up to 100 mW into the modulator provide no degradation in device linearity, with modulators demonstrating typical SFDRs of 110 dB·Hz 2/3 . These III-V/Si MZI modulators, using a 500-nm ``thick'' Si layer for III-V integration, demonstrate applicability for high-SFDR analog fiber-optic links without need for an erbium-doped fiber amplifier.
ISSN:1943-0655
1943-0655
1943-0647
DOI:10.1109/JPHOT.2019.2903979