The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as...

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Veröffentlicht in:	Journal of alloys and compounds 2019-04, Vol.782, p.566-575
Hauptverfasser:	Turut, A., Coșkun, M., Coșkun, F.M., Polat, O., Durmuș, Z., Çağlar, M., Efeoğlu, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Al/p-YMO/p-Si/Al Aluminum Bias Current voltage characteristics Emission analysis Ferroelectric Ferroelectric materials Ferroelectricity Film thickness Heterojunction Heterojunctions Linearity Magnetron sputtering Photovoltaic cells Polycrystalline Profilometers Rangefinding Schottky barrier Schottky diodes Silicon substrates Space charge Temperature dependence Temperature dependent current characteristics Thermionic emission Thin films X ray photoelectron spectroscopy YMnO3
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