The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as ∼70 nm via Dektak XT surface profilometer. The XRD, SEM, UV–Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV–vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the ln (I/V2) versus V−1 curves. [Display omitted] •The band gap of polycrystalline YMO thin film is 2.1 eV.•The Al/YMO/p-Si heterojunction has exhibited Schottky diode-like behavior.•Reverse bias I-V curves have not demonstrated presence of leakage current.•The forward bias conduction in the junction at each temperature obeys F-N tunneling.•The calculated ideality factor is 0.81 and barrier height is 2.62 at 300 K.