Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

•CdMnTe growth by vertical Bridgman method.•Free from Te-inclusions >1 µm.•X-ray topography. We grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of seconda...

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Veröffentlicht in:Journal of crystal growth 2019-03, Vol.509, p.35-39
Hauptverfasser: Roy, U.N., Camarda, G.S., Cui, Y., Gul, R., Hossain, A., Yang, G., Okobiah, O.K., Egarievwe, S.U., James, R.B.
Format: Artikel
Sprache:eng
Schlagworte:
A1. Characterization
A1. Extended defects
A1. Sub-grain boundary network
A2. Bridgman
B2. Semiconducting II-VI materials
B2.CdMnTe
Bridgman method
Cadmium
Crystal growth
Grain boundaries
Inclusions
Ingots
Manganese
Stress concentration
Thermal stress
X ray topography
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Zusammenfassung:•CdMnTe growth by vertical Bridgman method.•Free from Te-inclusions >1 µm.•X-ray topography. We grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size 
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.12.026