Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern

•CVD diamond layer was grown on tungsten patterned HPHT diamond by MPCVD.•NV centers appear under tungsten in HPHT diamond after growth.•NV center densities above tungsten are higher than that of other regions. The nitrogen vacancy (NV) center distribution in epitaxial lateral overgrowth (ELO) single crystal diamond layer grown on tungsten patterned HPHT substrate by microwave plasma chemical vapor deposition (CVD) system has been investigated. It has been found that in ELO diamond layer densities of NV0 and NV− center above the tungsten metal are enhanced. Meanwhile, in patterned high-pressure and high-temperature (HPHT) substrate the density of NV− center beneath the tungsten metal is much higher than that of NV0. The HPHT substrate does not contain NV centers before CVD growth, and there is almost no NV center in the region without tungsten metal after growth.