Electrical transport effects in YBCO/LSMO bilayer junctions
The electrical transport effects in interfaces of high TC superconducting and ferromagnetic thin film bilayer structures (YBa2Cu3Ox/La0.67Sr0.33MnO3 junctions with areas of ∼0.2 × 10−4 cm2 and ∼1.21 × 10−4 cm2) were investigated in view of the importance of such structures for oxide electronics and...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2018-12, Vol.550, p.324-331 |
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| container_title | Physica. B, Condensed matter |
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| creator | Nurgaliev, T. Štrbík, V. Gál, N. Chromik, Š. Sojková, M. |
| description | The electrical transport effects in interfaces of high TC superconducting and ferromagnetic thin film bilayer structures (YBa2Cu3Ox/La0.67Sr0.33MnO3 junctions with areas of ∼0.2 × 10−4 cm2 and ∼1.21 × 10−4 cm2) were investigated in view of the importance of such structures for oxide electronics and spintronics applications. In some structures the junction resistance Rj, measured by a standard four probe method at T TC were discussed as well.
•Electrical transport across HTS YBCO/FM LSMO junctions is studied by 4-probe method.•Measured junction resistance Rj at T |
| doi_str_mv | 10.1016/j.physb.2018.09.021 |
| format | Article |
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•Electrical transport across HTS YBCO/FM LSMO junctions is studied by 4-probe method.•Measured junction resistance Rj at T < TC is lower than the interface resistance Rif.•It is shown how to evaluate right interface resistance Rif from measurements of Rj.•I-V characteristic can change sign in dependence on current I0 flowing across junction.•The effect is quantitatively described using a model, proposed in the paper.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2018.09.021</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Bilayers ; Current voltage characteristics ; Dependence ; Electric current effect ; Electrical junctions ; Electronics ; Ferromagnetic materials ; I-V characteristics ; Interface resistance ; Spintronics ; Superconductivity ; Thin films ; Transport ; YBCO superconductors ; YBCO/LSMO junction</subject><ispartof>Physica. B, Condensed matter, 2018-12, Vol.550, p.324-331</ispartof><rights>2018 Elsevier B.V.</rights><rights>Copyright Elsevier BV Dec 1, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-49d405916e0d30cfe8ec947c51371235506f4f86b925dd51b2538f2fdab23e823</citedby><cites>FETCH-LOGICAL-c331t-49d405916e0d30cfe8ec947c51371235506f4f86b925dd51b2538f2fdab23e823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2018.09.021$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Nurgaliev, T.</creatorcontrib><creatorcontrib>Štrbík, V.</creatorcontrib><creatorcontrib>Gál, N.</creatorcontrib><creatorcontrib>Chromik, Š.</creatorcontrib><creatorcontrib>Sojková, M.</creatorcontrib><title>Electrical transport effects in YBCO/LSMO bilayer junctions</title><title>Physica. B, Condensed matter</title><description>The electrical transport effects in interfaces of high TC superconducting and ferromagnetic thin film bilayer structures (YBa2Cu3Ox/La0.67Sr0.33MnO3 junctions with areas of ∼0.2 × 10−4 cm2 and ∼1.21 × 10−4 cm2) were investigated in view of the importance of such structures for oxide electronics and spintronics applications. In some structures the junction resistance Rj, measured by a standard four probe method at T < TC, can be significantly lower (even a few orders) than the real interface resistance Rif because of which a wrong interpretation of the last may occur. We show how to evaluate the right interface resistance and the real Rif was determined from the measurement of RJ for the above two junctions. An unordinary effect - a “change” of the sign of the I-V characteristics in dependence on the current I0 flowing across the bilayer junction was observed in our experiments. We explained the essence of the effect and quantitatively described the effect using a model, proposed in the paper. The conditions for observation of a “negative” value of RJ at T > TC were discussed as well.
•Electrical transport across HTS YBCO/FM LSMO junctions is studied by 4-probe method.•Measured junction resistance Rj at T < TC is lower than the interface resistance Rif.•It is shown how to evaluate right interface resistance Rif from measurements of Rj.•I-V characteristic can change sign in dependence on current I0 flowing across junction.•The effect is quantitatively described using a model, proposed in the paper.</description><subject>Bilayers</subject><subject>Current voltage characteristics</subject><subject>Dependence</subject><subject>Electric current effect</subject><subject>Electrical junctions</subject><subject>Electronics</subject><subject>Ferromagnetic materials</subject><subject>I-V characteristics</subject><subject>Interface resistance</subject><subject>Spintronics</subject><subject>Superconductivity</subject><subject>Thin films</subject><subject>Transport</subject><subject>YBCO superconductors</subject><subject>YBCO/LSMO junction</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-Ai8Fz-1mJk2bIB50WT9gZQ_qwVNo0wRTaluTrrD_3qzr2bkMDO8zwzyEXALNgEKxaLPxYxfqDCmIjMqMIhyRGYiSpQiMH5MZlQhpzrE4JWchtDQWlDAj16vO6Mk7XXXJ5Ks-jIOfEmNtnIbE9cn73XKzWL88b5LaddXO-KTd9npyQx_OyYmtumAu_vqcvN2vXpeP6Xrz8LS8XaeaMZjSXDY55RIKQxtGtTXCaJmXmgMrARnntLC5FUUtkTcNhxo5ExZtU9XIjEA2J1eHvaMfvrYmTKodtr6PJxWCBIHIZR5T7JDSfgjBG6tG7z4rv1NA1d6SatWvJbW3pKhU0VKkbg6UiQ98O-NV0M702jTORwWqGdy__A9IzG-t</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Nurgaliev, T.</creator><creator>Štrbík, V.</creator><creator>Gál, N.</creator><creator>Chromik, Š.</creator><creator>Sojková, M.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20181201</creationdate><title>Electrical transport effects in YBCO/LSMO bilayer junctions</title><author>Nurgaliev, T. ; Štrbík, V. ; Gál, N. ; Chromik, Š. ; Sojková, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-49d405916e0d30cfe8ec947c51371235506f4f86b925dd51b2538f2fdab23e823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Bilayers</topic><topic>Current voltage characteristics</topic><topic>Dependence</topic><topic>Electric current effect</topic><topic>Electrical junctions</topic><topic>Electronics</topic><topic>Ferromagnetic materials</topic><topic>I-V characteristics</topic><topic>Interface resistance</topic><topic>Spintronics</topic><topic>Superconductivity</topic><topic>Thin films</topic><topic>Transport</topic><topic>YBCO superconductors</topic><topic>YBCO/LSMO junction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nurgaliev, T.</creatorcontrib><creatorcontrib>Štrbík, V.</creatorcontrib><creatorcontrib>Gál, N.</creatorcontrib><creatorcontrib>Chromik, Š.</creatorcontrib><creatorcontrib>Sojková, M.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nurgaliev, T.</au><au>Štrbík, V.</au><au>Gál, N.</au><au>Chromik, Š.</au><au>Sojková, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical transport effects in YBCO/LSMO bilayer junctions</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2018-12-01</date><risdate>2018</risdate><volume>550</volume><spage>324</spage><epage>331</epage><pages>324-331</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>The electrical transport effects in interfaces of high TC superconducting and ferromagnetic thin film bilayer structures (YBa2Cu3Ox/La0.67Sr0.33MnO3 junctions with areas of ∼0.2 × 10−4 cm2 and ∼1.21 × 10−4 cm2) were investigated in view of the importance of such structures for oxide electronics and spintronics applications. In some structures the junction resistance Rj, measured by a standard four probe method at T < TC, can be significantly lower (even a few orders) than the real interface resistance Rif because of which a wrong interpretation of the last may occur. We show how to evaluate the right interface resistance and the real Rif was determined from the measurement of RJ for the above two junctions. An unordinary effect - a “change” of the sign of the I-V characteristics in dependence on the current I0 flowing across the bilayer junction was observed in our experiments. We explained the essence of the effect and quantitatively described the effect using a model, proposed in the paper. The conditions for observation of a “negative” value of RJ at T > TC were discussed as well.
•Electrical transport across HTS YBCO/FM LSMO junctions is studied by 4-probe method.•Measured junction resistance Rj at T < TC is lower than the interface resistance Rif.•It is shown how to evaluate right interface resistance Rif from measurements of Rj.•I-V characteristic can change sign in dependence on current I0 flowing across junction.•The effect is quantitatively described using a model, proposed in the paper.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2018.09.021</doi><tpages>8</tpages></addata></record> |
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| subjects | Bilayers Current voltage characteristics Dependence Electric current effect Electrical junctions Electronics Ferromagnetic materials I-V characteristics Interface resistance Spintronics Superconductivity Thin films Transport YBCO superconductors YBCO/LSMO junction |
| title | Electrical transport effects in YBCO/LSMO bilayer junctions |
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