Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode
In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.
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| Veröffentlicht in: | IEEE transactions on power electronics 2019-04, Vol.34 (4), p.3091-3097 |
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| container_end_page | 3097 |
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| container_issue | 4 |
| container_start_page | 3091 |
| container_title | IEEE transactions on power electronics |
| container_volume | 34 |
| creator | Hohmann, Fabian Bakran, Mark-M. |
| description | In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter. |
| doi_str_mv | 10.1109/TPEL.2018.2849848 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2191145678</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8392791</ieee_id><sourcerecordid>2191145678</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-5e5fc58f9cb17a2a3d45cff0f5f95b566f617221f277c1f5cd2a8f69065740773</originalsourceid><addsrcrecordid>eNo9kE1PAjEQhhujiYj-AOOliefFTne7bY-KKBgS94Dx2JTuVBcLi-1i4r93CcTTzOF55-Mh5BrYCIDpu0U1mY84AzXiqtCqUCdkALqAjAGTp2TAlBKZ0jo_JxcprRiDQjAYkJfZehvbH6xphdG3cW03Dmnf0KkNPnuITf2BdIwhJPredJ_U0spGGwIGWkVMaWvdF31s2hovyZm3IeHVsQ7J29NkMZ5m89fn2fh-njmu8y4TKLwTymu3BGm5zetCOO-ZF16LpShLX4LkHDyX0oEXruZW-VKzUsiCSZkPye1hbn_49w5TZ1btLm76lYaDhv6xUqqeggPlYptSRG-2sVnb-GuAmb0ys1dm9srMUVmfuTlkGkT851WuudSQ_wGEcWZp</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2191145678</pqid></control><display><type>article</type><title>Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode</title><source>IEEE Electronic Library (IEL)</source><creator>Hohmann, Fabian ; Bakran, Mark-M.</creator><creatorcontrib>Hohmann, Fabian ; Bakran, Mark-M.</creatorcontrib><description>In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2018.2849848</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bridge circuits ; Converters ; HVDC transmission ; Inductance ; Insulated gate bipolar transistors ; Inverters ; modular multilevel converter ; power semiconductor devices ; Rectifiers ; Semiconductor diodes ; Switches</subject><ispartof>IEEE transactions on power electronics, 2019-04, Vol.34 (4), p.3091-3097</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-5e5fc58f9cb17a2a3d45cff0f5f95b566f617221f277c1f5cd2a8f69065740773</citedby><cites>FETCH-LOGICAL-c293t-5e5fc58f9cb17a2a3d45cff0f5f95b566f617221f277c1f5cd2a8f69065740773</cites><orcidid>0000-0001-5208-1808</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8392791$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8392791$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hohmann, Fabian</creatorcontrib><creatorcontrib>Bakran, Mark-M.</creatorcontrib><title>Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.</description><subject>Bridge circuits</subject><subject>Converters</subject><subject>HVDC transmission</subject><subject>Inductance</subject><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>modular multilevel converter</subject><subject>power semiconductor devices</subject><subject>Rectifiers</subject><subject>Semiconductor diodes</subject><subject>Switches</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYj-AOOliefFTne7bY-KKBgS94Dx2JTuVBcLi-1i4r93CcTTzOF55-Mh5BrYCIDpu0U1mY84AzXiqtCqUCdkALqAjAGTp2TAlBKZ0jo_JxcprRiDQjAYkJfZehvbH6xphdG3cW03Dmnf0KkNPnuITf2BdIwhJPredJ_U0spGGwIGWkVMaWvdF31s2hovyZm3IeHVsQ7J29NkMZ5m89fn2fh-njmu8y4TKLwTymu3BGm5zetCOO-ZF16LpShLX4LkHDyX0oEXruZW-VKzUsiCSZkPye1hbn_49w5TZ1btLm76lYaDhv6xUqqeggPlYptSRG-2sVnb-GuAmb0ys1dm9srMUVmfuTlkGkT851WuudSQ_wGEcWZp</recordid><startdate>20190401</startdate><enddate>20190401</enddate><creator>Hohmann, Fabian</creator><creator>Bakran, Mark-M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5208-1808</orcidid></search><sort><creationdate>20190401</creationdate><title>Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode</title><author>Hohmann, Fabian ; Bakran, Mark-M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-5e5fc58f9cb17a2a3d45cff0f5f95b566f617221f277c1f5cd2a8f69065740773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Bridge circuits</topic><topic>Converters</topic><topic>HVDC transmission</topic><topic>Inductance</topic><topic>Insulated gate bipolar transistors</topic><topic>Inverters</topic><topic>modular multilevel converter</topic><topic>power semiconductor devices</topic><topic>Rectifiers</topic><topic>Semiconductor diodes</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hohmann, Fabian</creatorcontrib><creatorcontrib>Bakran, Mark-M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hohmann, Fabian</au><au>Bakran, Mark-M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2019-04-01</date><risdate>2019</risdate><volume>34</volume><issue>4</issue><spage>3091</spage><epage>3097</epage><pages>3091-3097</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2018.2849848</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5208-1808</orcidid></addata></record> |
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| identifier | ISSN: 0885-8993 |
| ispartof | IEEE transactions on power electronics, 2019-04, Vol.34 (4), p.3091-3097 |
| issn | 0885-8993 1941-0107 |
| language | eng |
| recordid | cdi_proquest_journals_2191145678 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bridge circuits Converters HVDC transmission Inductance Insulated gate bipolar transistors Inverters modular multilevel converter power semiconductor devices Rectifiers Semiconductor diodes Switches |
| title | Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T06%3A59%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20Performance%20for%20Half-Bridge%20Cells%20With%20a%20Parallel%20Presspack%20Diode&rft.jtitle=IEEE%20transactions%20on%20power%20electronics&rft.au=Hohmann,%20Fabian&rft.date=2019-04-01&rft.volume=34&rft.issue=4&rft.spage=3091&rft.epage=3097&rft.pages=3091-3097&rft.issn=0885-8993&rft.eissn=1941-0107&rft.coden=ITPEE8&rft_id=info:doi/10.1109/TPEL.2018.2849848&rft_dat=%3Cproquest_RIE%3E2191145678%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2191145678&rft_id=info:pmid/&rft_ieee_id=8392791&rfr_iscdi=true |