Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode

Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode

In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.

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Veröffentlicht in:IEEE transactions on power electronics 2019-04, Vol.34 (4), p.3091-3097
Hauptverfasser: Hohmann, Fabian, Bakran, Mark-M.
Format: Artikel
Sprache:eng
Schlagworte:
Bridge circuits
Converters
HVDC transmission
Inductance
Insulated gate bipolar transistors
Inverters
modular multilevel converter
power semiconductor devices
Rectifiers
Semiconductor diodes
Switches
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Beschreibung
Zusammenfassung:In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2018.2849848