Fabrication of CdS/CdTe Heterostructures by Chemical Synthesis Using a p-Type CdTe Film Grown by Electrodeposition Employing EDTA as Strong Complexing Agent

CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO 2 :F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO 2 :F/Cd...

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Veröffentlicht in:Journal of electronic materials 2019-06, Vol.48 (6), p.3595-3602
Hauptverfasser: Arreguín-Campos, M., Gutiérrez Z-B, K., Quiñones-Galván, J. G., Santos-Cruz, J., Mayén-Hernández, S. A., Zelaya-Angel, O., Olvera, M. de la L., Contreras-Puente, G., de Moure-Flores, F.
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Sprache:eng
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Zusammenfassung:CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO 2 :F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO 2 :F/CdS substrates at 80°C, using ethylenediaminetetraacetic acid (EDTA) as strong complexing agent. The cathodic potential was varied from − 0.70 V to − 1.20 V. Raman spectroscopy showed that for a potential of − 1.20 V a CdTe film with high crystalline quality was obtained. The electric characterization through J – V measurements, indicates the formation of a n -CdS/ p -CdTe junction. These results showed that p -type CdTe films grown by electrodeposition technique using EDTA as strong complexing agent were obtained.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07114-9