High‐Performance SiC Nanobelt Photodetectors with Long‐Term Stability Against 300 °C up to 180 Days

In the present work, high‐performance photodetectors (PDs) based on a single B‐doped 3C‐SiC nanobelt, which are synthesized via catalyst‐free pyrolysis of polymeric precursors of polysilazane, are reported. The as‐built PDs have a high responsivity and external quantum efficiency of 6.37 × 105 A · W−1 and 2.0 × 108% under 405 nm light with a power density of 0.14 mW · cm−2 at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 × 1014 Jones. Moreover, the B‐doped 3C‐SiC nanobelt PDs exhibit a long‐term stability against 300 °C up to 180 days, suggesting their promising applications to be served under harsh conditions. Photodetectors based on a single B‐doped SiC nanobelt are reported, which has a detectivity of 6.86 × 1014 Jones with a long‐term stability against 300 °C up to 180 days.