28GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

This article presents a 28 GHz switch and LNA chipset, and the RF front‐end module for 5G communication systems. The 28 GHz Single Pole Double Through (SPDT) switch and LNA MMICs are embedded in single RF front‐end module successfully using molding based embedded Wafer‐Level Package (eWLP) technology. For the low noise figure and high isolation, inductive source degenerated LNA topology and double shunt FET structure for SPDT switch are employed, and LNA and SPDT are implemented in single IC. The eWLP based package minimizes the parasitic component such as bond‐wire inductance and signals loss to enhance the performance of the RF front‐end module. At 28 GHz, the measured gain and noise figure of receiver path are 15.5 dB and 3.46 dB, respectively, and the IIP3 is +3 dBm at 45 mW power consumption.