Specific Features of the Luminescence of ZnO:Te/GaN/Al2O3 Heterostructures

High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al 2 O 3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Technical physics letters 2018-12, Vol.44 (12), p.1142-1144
Hauptverfasser:	Bagamadova, A. M., Asvarov, A. Sh, Omaev, A. K., Zobov, M. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Classical and Continuum Physics Continuous flow Epitaxial growth Heterostructures Low pressure Morphology Photoluminescence Physics Physics and Astronomy Thin films Vapor phase epitaxy X-ray diffraction Zinc oxide Zinc oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al 2 O 3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al 2 O 3 heterostructure have been analyzed.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785018120398