On-line tuning system of multivariate dEWMA control based on a neural network approach

The double exponentially weighted moving average (EWMA) controller is a popular algorithm for on-line quality control of semiconductor manufacturing processes. The performance of the closed-loop system hinges on the adequacy of the two weight parameters of the double EWMA equations. In 2004, Su and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International journal of production research 2008-07, Vol.46 (13), p.3459-3484
Hauptverfasser: Fan, S.-K. S., Wang, C.-Y.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The double exponentially weighted moving average (EWMA) controller is a popular algorithm for on-line quality control of semiconductor manufacturing processes. The performance of the closed-loop system hinges on the adequacy of the two weight parameters of the double EWMA equations. In 2004, Su and Hsu presented an approach based on the neural technique for 'on-line' tuning the weight of the single EWMA equation in the single-input single-output (SISO) system. The present paper extends the neural network on-line tuning scheme to the double EWMA controller for the non-squared multiple-input multiple-output (MIMO) system, and validates the control performance by means of a simulated chemical-mechanical planarization (CMP) process in semiconductor manufacturing. Both linear and non-linear equipment models are considered to evaluate the proposed controller, coupling with the deterministic drift, the Gaussian noise and the first-order integrated moving average (IMA) disturbance. It has been shown from a variety of simulation studies that the proposed method exhibits quite competitive control performance as compared with the previous control system. The other merit of the proposed approach is that the tuning system, if sufficient training in a neural network is available, can be practicably applied to complex semiconductor processes without undue difficulty.
ISSN:0020-7543
1366-588X
DOI:10.1080/00207540601096932