Gas-Sensing Properties of Spinodally Decomposed (Ti,Sn)O2 Thin Films

The gas‐sensing properties of spinodally decomposed (Ti,Sn)O2 thin films on sapphire substrates were investigated for CO, C3H8, and C2H5OH, and hydrogen gases at a temperature of 500°C. The variation in the d‐spacing of the (101) plane of (Ti0.5Sn0.5)O2 films showed behavior that was typical of spin...

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Veröffentlicht in:Journal of the American Ceramic Society 1999-01, Vol.82 (1), p.225-228
Hauptverfasser: Arakawa, Shuichi, Mogi, Kenji, Kikuta, Ko-ichi, Yogo, Toshinobu, Hirano, Shin-ichi, Seki, Yoji
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Sprache:eng
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Zusammenfassung:The gas‐sensing properties of spinodally decomposed (Ti,Sn)O2 thin films on sapphire substrates were investigated for CO, C3H8, and C2H5OH, and hydrogen gases at a temperature of 500°C. The variation in the d‐spacing of the (101) plane of (Ti0.5Sn0.5)O2 films showed behavior that was typical of spinodal decomposition during annealing at a temperature of 900°C. Transmission electron micrographs of the spinodally decomposed (Ti,Sn)O2 films on sapphire (0112) substrates revealed the characteristic modulated structure. The modulated lamella microstructure consisted of TiO2‐ and SnO2‐rich regions at intervals of ∼10 nm. The films were very sensitive to hydrogen gas and revealed anisotropic electrical conduction that was influenced by the modulated microstructure, which is characteristic of spinodal decomposition.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1999.tb01749.x