Detection of sputtered neutrals by ultrahigh-intensity positionization in the near-infrared

Detection of sputtered neutrals by ultrahigh-intensity positionization in the near-infrared

In a study, the characterization of sputtered semiconductor materials by ultrahigh-intensity positionization is performed using a high repetition, regeneratively amplified, ultrafast Ti-sapphire laser coupled with a modified magnetic-sector SIMS instrument.

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Bibliographische Detailangaben
Veröffentlicht in:Analytical chemistry (Washington) 1995-11, Vol.67 (22), p.4033
Hauptverfasser: Wise, Michael L, Emerson, A Bruce, Downey, Stephen W
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry
Instruments
Lasers
Semiconductors
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Beschreibung
Zusammenfassung:In a study, the characterization of sputtered semiconductor materials by ultrahigh-intensity positionization is performed using a high repetition, regeneratively amplified, ultrafast Ti-sapphire laser coupled with a modified magnetic-sector SIMS instrument.
ISSN:0003-2700
1520-6882