Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies
The microwave dielectric properties and microstructures of Ba(Ti 1−x Zr x ) 4 O 9 (0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the Q × f value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-03, Vol.30 (6), p.5567-5572 |
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| creator | Chen, Yuan-Bin Liu, Shih-Sheng |
| description | The microwave dielectric properties and microstructures of Ba(Ti
1−x
Zr
x
)
4
O
9
(0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the
Q
×
f
value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the
ε
r
value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of
ε
r
~ 35.5,
Q
×
f
~ 63,700 GHz (at 8 GHz), and
τ
f
~ 13 ppm/°C were obtained for Ba(Ti
0.9875
Zr
0.0125
)
4
O
9
ceramics sintered at 1300 °C for 4 h. |
| doi_str_mv | 10.1007/s10854-019-00850-y |
| format | Article |
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1−x
Zr
x
)
4
O
9
(0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the
Q
×
f
value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the
ε
r
value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of
ε
r
~ 35.5,
Q
×
f
~ 63,700 GHz (at 8 GHz), and
τ
f
~ 13 ppm/°C were obtained for Ba(Ti
0.9875
Zr
0.0125
)
4
O
9
ceramics sintered at 1300 °C for 4 h.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-00850-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dielectric properties ; Materials Science ; Microwave frequencies ; Optical and Electronic Materials ; Scanning electron microscopy ; X-ray diffraction ; Zirconium</subject><ispartof>Journal of materials science. Materials in electronics, 2019-03, Vol.30 (6), p.5567-5572</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-85402e329ec9baa5abe2fa8166401dfa0c48ddd49b159aafcd760c13def76133</citedby><cites>FETCH-LOGICAL-c249t-85402e329ec9baa5abe2fa8166401dfa0c48ddd49b159aafcd760c13def76133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-019-00850-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-019-00850-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Chen, Yuan-Bin</creatorcontrib><creatorcontrib>Liu, Shih-Sheng</creatorcontrib><title>Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The microwave dielectric properties and microstructures of Ba(Ti
1−x
Zr
x
)
4
O
9
(0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the
Q
×
f
value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the
ε
r
value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of
ε
r
~ 35.5,
Q
×
f
~ 63,700 GHz (at 8 GHz), and
τ
f
~ 13 ppm/°C were obtained for Ba(Ti
0.9875
Zr
0.0125
)
4
O
9
ceramics sintered at 1300 °C for 4 h.</description><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dielectric properties</subject><subject>Materials Science</subject><subject>Microwave frequencies</subject><subject>Optical and Electronic Materials</subject><subject>Scanning electron microscopy</subject><subject>X-ray diffraction</subject><subject>Zirconium</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kD9PwzAUxC0EEqXwBZgsMRueHTuJRyh_pUpdOiAWy3GeUaq2KbZD1W-PIUhsTO8N97s7HSGXHK45QHUTOdRKMuCaQf6AHY7IhKuqYLIWr8dkAlpVTCohTslZjCsAKGVRT8j8vsM1uhQ6R3eh32FIHUbae7ru9_QtsDg0MXVpSNjSO7vs5EJTm-imc6Hf20-kPuDHgFuXsXNy4u064sXvnZLl48Ny9szmi6eX2e2cOSF1YrkpCCyERqcba5VtUHhb87KUwFtvwcm6bVupG660td61VQmOFy36quRFMSVXo20unKNjMqt-CNucaASvaqkqJXVWiVGVi8YY0Jtd6DY2HAwH8z2aGUczeTTzM5o5ZKgYoZjF23cMf9b_UF-6lnDq</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Chen, Yuan-Bin</creator><creator>Liu, Shih-Sheng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20190301</creationdate><title>Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies</title><author>Chen, Yuan-Bin ; Liu, Shih-Sheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-85402e329ec9baa5abe2fa8166401dfa0c48ddd49b159aafcd760c13def76133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Dielectric properties</topic><topic>Materials Science</topic><topic>Microwave frequencies</topic><topic>Optical and Electronic Materials</topic><topic>Scanning electron microscopy</topic><topic>X-ray diffraction</topic><topic>Zirconium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yuan-Bin</creatorcontrib><creatorcontrib>Liu, Shih-Sheng</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Yuan-Bin</au><au>Liu, Shih-Sheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-03-01</date><risdate>2019</risdate><volume>30</volume><issue>6</issue><spage>5567</spage><epage>5572</epage><pages>5567-5572</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The microwave dielectric properties and microstructures of Ba(Ti
1−x
Zr
x
)
4
O
9
(0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the
Q
×
f
value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the
ε
r
value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of
ε
r
~ 35.5,
Q
×
f
~ 63,700 GHz (at 8 GHz), and
τ
f
~ 13 ppm/°C were obtained for Ba(Ti
0.9875
Zr
0.0125
)
4
O
9
ceramics sintered at 1300 °C for 4 h.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-00850-y</doi><tpages>6</tpages></addata></record> |
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| issn | 0957-4522 1573-482X |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Dielectric properties Materials Science Microwave frequencies Optical and Electronic Materials Scanning electron microscopy X-ray diffraction Zirconium |
| title | Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies |
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