Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies
The microwave dielectric properties and microstructures of Ba(Ti 1−x Zr x ) 4 O 9 (0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the Q × f value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-03, Vol.30 (6), p.5567-5572 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The microwave dielectric properties and microstructures of Ba(Ti
1−x
Zr
x
)
4
O
9
(0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the
Q
×
f
value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the
ε
r
value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of
ε
r
~ 35.5,
Q
×
f
~ 63,700 GHz (at 8 GHz), and
τ
f
~ 13 ppm/°C were obtained for Ba(Ti
0.9875
Zr
0.0125
)
4
O
9
ceramics sintered at 1300 °C for 4 h. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-019-00850-y |