Dielectric properties of low Zr-substituted BaTi4O9 at microwave frequencies

The microwave dielectric properties and microstructures of Ba(Ti 1−x Zr x ) 4 O 9 (0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the Q  ×  f value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2019-03, Vol.30 (6), p.5567-5572
Hauptverfasser: Chen, Yuan-Bin, Liu, Shih-Sheng
Format: Artikel
Sprache:eng
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Zusammenfassung:The microwave dielectric properties and microstructures of Ba(Ti 1−x Zr x ) 4 O 9 (0≤ x ≤ 0.025) ceramics prepared using the conventional solid-state route were investigated. When x was increased from 0 to 0.0125, the Q  ×  f value of the specimen increased from 32,600 GHz to a maximum of 63,700 GHz, and the ε r value increased from 34.6 to 35.5. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy. The dielectric properties were correlated with various x values. With x = 0.0125, the excellent microwave dielectric properties of ε r  ~ 35.5, Q  ×  f  ~ 63,700 GHz (at 8 GHz), and τ f  ~ 13 ppm/°C were obtained for Ba(Ti 0.9875 Zr 0.0125 ) 4 O 9 ceramics sintered at 1300 °C for 4 h.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-00850-y