Large area MoS^sub 2^/Si heterojunction-based solar cell through sol-gel method

Large area MoS2/Si heterojunction-based solar cell was prepared in which MoS2 thin film was directly grown on p-Si wafer using sol-gel method. Chemical bonding and microstructure analysis show that the MoS2 film was in the initial region of transition from amorphous to microcrystalline phase. Compared with the ITO/p-Si/Ag structure without MoS2, the open-circuit voltage (VOC), short-circuit current density (JSC) and fill factor (FF) of the ITO/MoS2/p-Si/Ag solar cell were improved dramatically, and the conversion efficiency (CE) increased from 1.1% to 4.6%. The insertion of MoS2 film reduced the interface defects concentration and increased the depletion region width of the solar cell, showing its enhancement effect on both chemical passivation and field passivation.