Backscattered electron detector for 3D microstructure visualization in scanning electron microscopy

A new configuration of semiconductor detectors for backscattered electrons for a scanning electron microscope (SEM) is presented. The result of the optimization was the possibility to extract the information about the spatial relief (3D topology) of the sample and its subsurface structure (3D tomogr...

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Veröffentlicht in:Review of scientific instruments 2019-02, Vol.90 (2), p.023701-023701
Hauptverfasser: Rau, E. I., Karaulov, V. Yu, Zaitsev, S. V.
Format: Artikel
Sprache:eng
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Zusammenfassung:A new configuration of semiconductor detectors for backscattered electrons for a scanning electron microscope (SEM) is presented. The result of the optimization was the possibility to extract the information about the spatial relief (3D topology) of the sample and its subsurface structure (3D tomography) in the simplest way. The detector consists of 8 sensors-semiconductor plates, positioned in a certain way. The proposed method was tested on real structures having a surface micro relief or a subsurface volume structure. Experiments and simple calculations show increased effectiveness and a high signal-noise ratio in the proposed method. This is important, particularly for studying the radiation-sensitive biomedical tissue in SEM.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.5054746