Crystal structure and exchange bias of Ni-Mn-based films
Crystal structure and hysteresis properties of Ni-Mn/FeNi-based films are studied with respect to the composition of the Ni-Mn layer, annealing conditions, temperature, and the presence of an auxiliary layer. The exchange bias is confirmed to originate from the pinning effect of the antiferromagneti...
Gespeichert in:
Veröffentlicht in: | Journal of alloys and compounds 2019-03, Vol.777, p.264-270 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Crystal structure and hysteresis properties of Ni-Mn/FeNi-based films are studied with respect to the composition of the Ni-Mn layer, annealing conditions, temperature, and the presence of an auxiliary layer. The exchange bias is confirmed to originate from the pinning effect of the antiferromagnetic γ-NiMn (A1 fcc) or θ-NiMn (L10 fct) phases formed in the Ni-Mn layer through the epitaxial growth on the seed layer or due to the annealing, respectively. The composition range of Ni-Mn and annealing temperatures providing the formation of the antiferromagnetic phases are determined, as well as their influence on temperature dependences of the exchange bias field and coercivity of the FeNi layer.
•Exchange bias of NiMn/FeNi films is established to be due to either the antiferromagnetic A1 γ-Mn or L10 θ-NiMn.•Compositional and temperature dependences of exchange bias field and coercivity of NiMn/FeNi films are studied.•Blocking temperatures are established for both γ-Mn and θ-NiMn phases.•The metastable γ-Mn forms through epitaxial growth on the buffer cubic FeNi layer.•θ-NiMn forms after annealing by either decomposition of γ-Mn or emergence from the X-ray amorphous state. |
---|---|
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2018.11.016 |