Low Noise Global Shutter Image Sensor Working in the Charge Domain

In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is d...

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Veröffentlicht in:	IEEE electron device letters 2019-02, Vol.40 (2), p.310-313
Hauptverfasser:	Roy, Francois, Cazaux, Yvon, Waltz, Patrice, Malinge, Pierre, Billon-Pierron, Nicolas
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Charge transfer CMOS image sensors Dark current deep trench capacitor Depletion Electronics Engineering Sciences global shutter Image sensor Logic gates Low noise Micromechanical devices Optics Photodiodes Photonic pinned photodiode
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