Low Noise Global Shutter Image Sensor Working in the Charge Domain

Low Noise Global Shutter Image Sensor Working in the Charge Domain

In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is d...

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Veröffentlicht in:IEEE electron device letters 2019-02, Vol.40 (2), p.310-313
Hauptverfasser: Roy, Francois, Cazaux, Yvon, Waltz, Patrice, Malinge, Pierre, Billon-Pierron, Nicolas
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Charge transfer
CMOS image sensors
Dark current
deep trench capacitor
Depletion
Electronics
Engineering Sciences
global shutter
Image sensor
Logic gates
Low noise
Micromechanical devices
Optics
Photodiodes
Photonic
pinned photodiode
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Beschreibung
Zusammenfassung:In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is demonstrated. The fully depleted pinned capacitance is able to store 12ke- with dark current lower than 25e-/s at 60 °C. The GS efficiency, better than 99.96% at 550nm, is reported.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2888755