Low Noise Global Shutter Image Sensor Working in the Charge Domain
In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is d...
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| Veröffentlicht in: | IEEE electron device letters 2019-02, Vol.40 (2), p.310-313 |
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| container_end_page | 313 |
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| container_issue | 2 |
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| container_title | IEEE electron device letters |
| container_volume | 40 |
| creator | Roy, Francois Cazaux, Yvon Waltz, Patrice Malinge, Pierre Billon-Pierron, Nicolas |
| description | In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is demonstrated. The fully depleted pinned capacitance is able to store 12ke- with dark current lower than 25e-/s at 60 °C. The GS efficiency, better than 99.96% at 550nm, is reported. |
| doi_str_mv | 10.1109/LED.2018.2888755 |
| format | Article |
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This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is demonstrated. The fully depleted pinned capacitance is able to store 12ke- with dark current lower than 25e-/s at 60 °C. The GS efficiency, better than 99.96% at 550nm, is reported.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2018.2888755</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Charge transfer ; CMOS image sensors ; Dark current ; deep trench capacitor ; Depletion ; Electronics ; Engineering Sciences ; global shutter ; Image sensor ; Logic gates ; Low noise ; Micromechanical devices ; Optics ; Photodiodes ; Photonic ; pinned photodiode</subject><ispartof>IEEE electron device letters, 2019-02, Vol.40 (2), p.310-313</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-6b4f8bd6b95cf85858be64d1e496faebbd01759ef18b912456e3422a4d2941043</citedby><orcidid>0000-0003-1992-8477</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8581449$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8581449$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://cea.hal.science/cea-04803636$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Roy, Francois</creatorcontrib><creatorcontrib>Cazaux, Yvon</creatorcontrib><creatorcontrib>Waltz, Patrice</creatorcontrib><creatorcontrib>Malinge, Pierre</creatorcontrib><creatorcontrib>Billon-Pierron, Nicolas</creatorcontrib><title>Low Noise Global Shutter Image Sensor Working in the Charge Domain</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. 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The GS efficiency, better than 99.96% at 550nm, is reported.</description><subject>Capacitance</subject><subject>Charge transfer</subject><subject>CMOS image sensors</subject><subject>Dark current</subject><subject>deep trench capacitor</subject><subject>Depletion</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>global shutter</subject><subject>Image sensor</subject><subject>Logic gates</subject><subject>Low noise</subject><subject>Micromechanical devices</subject><subject>Optics</subject><subject>Photodiodes</subject><subject>Photonic</subject><subject>pinned photodiode</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9PwjAUgBujiYjeTbw08eRh2HZt1x0REEgWPaDx2HTbGxuOFduh8b-3BkLe4R3e9359CN1SMqKUpI_ZbDpihKoRU0olQpyhARVCRUTI-BwNSMJpFFMiL9GV9xtCKOcJH6CnzP7gF9t4wPPW5qbFq3rf9-DwcmvWgFfQeevwh3WfTbfGTYf7GvCkNi4Up3Zrmu4aXVSm9XBzzEP0_jx7myyi7HW-nIyzqIiZ6COZ80rlpcxTUVRKhMhB8pICT2VlIM9LQhORQkVVnlLGhYSYM2Z4yVJOCY-H6OEwtzat3rlma9yvtqbRi3GmCzCacEViGctvGtj7A7tz9msPvtcbu3ddOE-zsEVKLlgSKHKgCme9d1CdxlKi_63qYFX_W9VHq6Hl7tDSAMAJD88En2n8B926b_8</recordid><startdate>20190201</startdate><enddate>20190201</enddate><creator>Roy, Francois</creator><creator>Cazaux, Yvon</creator><creator>Waltz, Patrice</creator><creator>Malinge, Pierre</creator><creator>Billon-Pierron, Nicolas</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Capacitance Charge transfer CMOS image sensors Dark current deep trench capacitor Depletion Electronics Engineering Sciences global shutter Image sensor Logic gates Low noise Micromechanical devices Optics Photodiodes Photonic pinned photodiode |
| title | Low Noise Global Shutter Image Sensor Working in the Charge Domain |
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