Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nuclear science 2017-08, Vol.64 (8), p.2031-2037
Hauptverfasser:	Javanainen, Arto, Turowski, Marek, Galloway, Kenneth F., Nicklaw, Christopher, Ferlet-Cavrois, Veronique, Bosser, Alexandre, Lauenstein, Jean-Marie, Muschitiello, Michele, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Dependence Electronic mail Electronics And Electrical Engineering Engineering Sciences Incidence angle Ion radiation effects Ions Leakage current Leakage currents Micro and nanotechnologies Microelectronics modeling power semiconductor devices Radiation effects Schottky diodes Silicon carbide silicon carbide (SiC)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2017.2717045