Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks

Pt/LiCoO 2 /SiO 2 /Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO 2 /SiO 2 /Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO 2 /SiO 2 /Si stacks can be modulated by LiCoO 2 crystal structures. The Pt/LiCoO 2 /SiO 2 /Si stacks with R-3m LiCoO 2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO 2 , and samples with amorphous or R-3m LiCoO 2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO 2 /SiO 2 /Si stacks and a further understanding of the homogeneous resistive switching behavior.