Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz
This paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP’s 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying...
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Veröffentlicht in: | AIP advances 2019-01, Vol.9 (1), p.015213-015213-8 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP’s 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying for the transmitter. The signal-to-noise ratio (SNR) for the absorption line of gaseous methanol (CH3OH) at 247.6 GHz is used as measure for the performance of the system. The implemented mixer-first receiver allows a high performance of the system due to its linearity up to an input power of -10 dBm. Using a transmitter-array with an output power of 7 dBm an SNR of 4660 (integration time of 2 ms for each data point) was obtained for the 247.6 GHz absorption line of CH3OH at 5 Pa. We have extended our single frequency-band system for 228 – 252 GHz to a 2-band system to cover the range 222 – 270 GHz by combining corresponding two transmitters and receivers with the frequency bands 222 – 256 GHz and 250 – 270 GHz on single transmitter- and receiver-chips. This 2-band operation allows a parallel spectra acquisition and therefore a high flexibility of data acquisition for the two frequency-bands. The 50 GHz bandwidth allows for highly specific and selective gas sensing. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.5066261 |