Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

The influence was studied of the addition of n -layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.

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Veröffentlicht in:Journal of superhard materials 2018-11, Vol.40 (6), p.435-438
Hauptverfasser: Shul’zhenko, A. A., Jaworska, L., Sokolov, A. N., Romanko, L. A., Gargin, V. G., Belyavina, N. N., Tkach, V. N., Zakora, A. P.
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container_end_page 438
container_issue 6
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container_title Journal of superhard materials
container_volume 40
creator Shul’zhenko, A. A.
Jaworska, L.
Sokolov, A. N.
Romanko, L. A.
Gargin, V. G.
Belyavina, N. N.
Tkach, V. N.
Zakora, A. P.
description The influence was studied of the addition of n -layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.
doi_str_mv 10.3103/S1063457618060102
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subjects Chemistry
Chemistry and Materials Science
Diamonds
Graphene
Letters to the Editor
Physical Chemistry
Silicon carbide
title Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite
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