Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

The influence was studied of the addition of n -layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of superhard materials 2018-11, Vol.40 (6), p.435-438
Hauptverfasser:	Shul’zhenko, A. A., Jaworska, L., Sokolov, A. N., Romanko, L. A., Gargin, V. G., Belyavina, N. N., Tkach, V. N., Zakora, A. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Diamonds Graphene Letters to the Editor Physical Chemistry Silicon carbide
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The influence was studied of the addition of n -layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.
ISSN:	1063-4576 1934-9408
DOI:	10.3103/S1063457618060102