Frequency Response of Barrier Type 2.6µm In0.83Ga0.17As/In0.83Al0.17As Photodetectors on InP

This paper reports on the impulse response characteristics of the wavelength‐extended 2.6 µm metamorphic In0.83Ga0.17As/InP photodetectors with an In0.66Ga0.34As/InAs superlattice electron barrier. This barrier detector features greater rising times and smaller falling times simultaneously compared with a reference detector without barrier, explained by the delayed hole diffusion current and the blocked electron current by the barrier, respectively. The 3 dB bandwidth is 3% lower than that of the reference detector which demonstrates that the barrier In0.83Ga0.17As detectors still retain the capability of high speed operation while offering lower dark currents.