Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the...

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Veröffentlicht in:	Russian physics journal 2019, Vol.61 (9), p.1660-1666
Hauptverfasser:	Mamedov, H. M., Kukevecz, A., Konya, Z., Kordas, K., Shah, S. I., Mamedov, V. U., Ahmedova, Kh. M., Mamedova, V. J., Rzaev, R. M., Shamilova, Sh. A., Khanmamedova, E. A., Agazade, L. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Physics Crystallites Hadrons Heavy Ions Heterojunctions Lasers Mathematical and Computational Physics Nuclear Physics Optical Devices Optics Photoelectricity Photonics Physics Physics and Astronomy Physics of Semiconductors and Dielectrics Pore size Porosity Silicon Theoretical
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Zusammenfassung:	Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.
ISSN:	1064-8887 1573-9228
DOI:	10.1007/s11182-018-1584-2