Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement

This work reports the strain effect on the electrical properties of highly doped n‐type single crystalline cubic silicon carbide (3C‐SiC) transferred onto a 6‐inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C‐SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n‐type 3C‐SiC. Our finding for the large gauge factor in n‐type 3C‐SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC‐on‐glass based MEMS applications. This work presents the characterization and theoretical analysis of the piezoresistive effect in n‐type cubic silicon carbide. The silicon carbide film is epitaxially grown on a Si wafer, and then transferred onto a glass substrate using anodic bonding. The SiC‐on‐glass template eliminates the leakage current to the substrate, enabling the development of piezoresistive sensors in harsh environments.