Impedance and Photosensitivity Spectra of Nanocomposite Structures Based on Layered Semiconductor InSe and Ionic Salt RbNO3

Photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic salt RbNO3 are investigated. It is shown that the nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide, and ionic salt ring‐shaped nanostructures, which are located in the (0001) planes of InSe crystal and periodically along its crystallographic C axis, have a high photosensitivity. Photosensitive vertical nanoctructures are prepared. They consist of 2D InSe layers, ultrathin In2O3 oxide layers, and ring‐shaped nanostructures of ionic salt RbNO3 located in (0001) planes of InSe. The formation of In2O3–RbNO3 nanocomposites at the InSe–RbNO3 interface and strong influence of the electric field of nanocapacitors created by Rb+ ions and InSe electrons lead to their high photosensitivity.