Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication
Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm 2 ) and scanning speed (10–750 mm/s). At a scanning speed of...
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| Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2018-11, Vol.45 (11), p.353-355 |
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| container_issue | 11 |
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| container_title | Bulletin of the Lebedev Physics Institute |
| container_volume | 45 |
| creator | Saraeva, I. N. Ivanova, A. K. Kudryashov, S. I. Nastulyavichus, A. A. |
| description | Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm
2
) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield. |
| doi_str_mv | 10.3103/S1068335618110076 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2156541862</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2156541862</sourcerecordid><originalsourceid>FETCH-LOGICAL-c268t-1c59f1b0fb473cbaaafbd20df6e822617d671cc94b47b3e0115bd8aa4c6d4c573</originalsourceid><addsrcrecordid>eNp1kE9LAzEQxYMoWKsfwFvA82om2WSzRyn1DxYVquBtSWYT3VI3a7IF_famVPAgnmaY93tv4BFyCuxcABMXS2BKCyEVaADGKrVHJlCLstBCv-znPcvFVj8kRymtGJNS13JC7ubeOxxp8HRhkot0_jmEtImOhp6Ob44-xoAupS2w7NYd5vO96cNg4tjh2tErY2OHZuxCf0wOvFknd_Izp-T5av40uykWD9e3s8tFgVzpsQCUtQfLvC0rgdYY423LWeuV05wrqFpVAWJdZt0KxwCkbbUxJaq2RFmJKTnb5Q4xfGxcGptV2MQ-v2w4SCVL0IpnCnYUxpBSdL4ZYvdu4lcDrNl21vzpLHv4zpMy27-6-Jv8v-kbSiNtsA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2156541862</pqid></control><display><type>article</type><title>Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication</title><source>SpringerLink Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Saraeva, I. N. ; Ivanova, A. K. ; Kudryashov, S. I. ; Nastulyavichus, A. A.</creator><creatorcontrib>Saraeva, I. N. ; Ivanova, A. K. ; Kudryashov, S. I. ; Nastulyavichus, A. A.</creatorcontrib><description>Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm
2
) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.</description><identifier>ISSN: 1068-3356</identifier><identifier>EISSN: 1934-838X</identifier><identifier>DOI: 10.3103/S1068335618110076</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Deionization ; Flux density ; Laser ablation ; Lasers ; Nanoparticles ; Physics ; Physics and Astronomy ; Scanning ; Silicon ; Single crystals</subject><ispartof>Bulletin of the Lebedev Physics Institute, 2018-11, Vol.45 (11), p.353-355</ispartof><rights>Allerton Press, Inc. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-1c59f1b0fb473cbaaafbd20df6e822617d671cc94b47b3e0115bd8aa4c6d4c573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S1068335618110076$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S1068335618110076$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Saraeva, I. N.</creatorcontrib><creatorcontrib>Ivanova, A. K.</creatorcontrib><creatorcontrib>Kudryashov, S. I.</creatorcontrib><creatorcontrib>Nastulyavichus, A. A.</creatorcontrib><title>Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication</title><title>Bulletin of the Lebedev Physics Institute</title><addtitle>Bull. Lebedev Phys. Inst</addtitle><description>Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm
2
) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.</description><subject>Deionization</subject><subject>Flux density</subject><subject>Laser ablation</subject><subject>Lasers</subject><subject>Nanoparticles</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Scanning</subject><subject>Silicon</subject><subject>Single crystals</subject><issn>1068-3356</issn><issn>1934-838X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsfwFvA82om2WSzRyn1DxYVquBtSWYT3VI3a7IF_famVPAgnmaY93tv4BFyCuxcABMXS2BKCyEVaADGKrVHJlCLstBCv-znPcvFVj8kRymtGJNS13JC7ubeOxxp8HRhkot0_jmEtImOhp6Ob44-xoAupS2w7NYd5vO96cNg4tjh2tErY2OHZuxCf0wOvFknd_Izp-T5av40uykWD9e3s8tFgVzpsQCUtQfLvC0rgdYY423LWeuV05wrqFpVAWJdZt0KxwCkbbUxJaq2RFmJKTnb5Q4xfGxcGptV2MQ-v2w4SCVL0IpnCnYUxpBSdL4ZYvdu4lcDrNl21vzpLHv4zpMy27-6-Jv8v-kbSiNtsA</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Saraeva, I. N.</creator><creator>Ivanova, A. K.</creator><creator>Kudryashov, S. I.</creator><creator>Nastulyavichus, A. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20181101</creationdate><title>Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication</title><author>Saraeva, I. N. ; Ivanova, A. K. ; Kudryashov, S. I. ; Nastulyavichus, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-1c59f1b0fb473cbaaafbd20df6e822617d671cc94b47b3e0115bd8aa4c6d4c573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Deionization</topic><topic>Flux density</topic><topic>Laser ablation</topic><topic>Lasers</topic><topic>Nanoparticles</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Scanning</topic><topic>Silicon</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saraeva, I. N.</creatorcontrib><creatorcontrib>Ivanova, A. K.</creatorcontrib><creatorcontrib>Kudryashov, S. I.</creatorcontrib><creatorcontrib>Nastulyavichus, A. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Bulletin of the Lebedev Physics Institute</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saraeva, I. N.</au><au>Ivanova, A. K.</au><au>Kudryashov, S. I.</au><au>Nastulyavichus, A. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication</atitle><jtitle>Bulletin of the Lebedev Physics Institute</jtitle><stitle>Bull. Lebedev Phys. Inst</stitle><date>2018-11-01</date><risdate>2018</risdate><volume>45</volume><issue>11</issue><spage>353</spage><epage>355</epage><pages>353-355</pages><issn>1068-3356</issn><eissn>1934-838X</eissn><abstract>Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm
2
) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1068335618110076</doi><tpages>3</tpages></addata></record> |
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| subjects | Deionization Flux density Laser ablation Lasers Nanoparticles Physics Physics and Astronomy Scanning Silicon Single crystals |
| title | Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T06%3A16%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Laser%20Exposure%20on%20the%20Process%20of%20Silicon%20Nanoparticle%20Fabrication&rft.jtitle=Bulletin%20of%20the%20Lebedev%20Physics%20Institute&rft.au=Saraeva,%20I.%20N.&rft.date=2018-11-01&rft.volume=45&rft.issue=11&rft.spage=353&rft.epage=355&rft.pages=353-355&rft.issn=1068-3356&rft.eissn=1934-838X&rft_id=info:doi/10.3103/S1068335618110076&rft_dat=%3Cproquest_cross%3E2156541862%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2156541862&rft_id=info:pmid/&rfr_iscdi=true |