Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics
Herein, we report samarium (Sm) dopant concentration effect on Cu 2 O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu 2 O films have polycrystalline cubic structure with ( 111 ) preferred orientation. It was seen from the SEM ph...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-02, Vol.30 (3), p.2530-2537 |
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| creator | Ravichandiran, C. Sakthivelu, A. Deva Arun Kumar, K. Davidprabu, R. Valanarasu, S. Kathalingam, A. Ganesh, V. Shkir, Mohd Algarni, H. AlFaify, S. |
| description | Herein, we report samarium (Sm) dopant concentration effect on Cu
2
O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu
2
O films have polycrystalline cubic structure with (
111
) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu
2
O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm
−1
which conformed the Cu
2
O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu
2
O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu
2
O films was increased along with the increase in dopant material concentration. |
| doi_str_mv | 10.1007/s10854-018-0527-6 |
| format | Article |
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2
O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu
2
O films have polycrystalline cubic structure with (
111
) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu
2
O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm
−1
which conformed the Cu
2
O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu
2
O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu
2
O films was increased along with the increase in dopant material concentration.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-018-0527-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper oxides ; Dopants ; Doping ; Luminous intensity ; Materials Science ; Optical and Electronic Materials ; Optoelectronics ; Photoelectric effect ; Photoelectric emission ; Photoluminescence ; Photosensitivity ; Pinholes ; Preferred orientation ; Raman spectroscopy ; Rare earth elements ; Samarium ; Spectrum analysis ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2019-02, Vol.30 (3), p.2530-2537</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-1f806ed39c6f50307af8861b079c10ae2a17a467472ce5eb8baa386e934dbb873</citedby><cites>FETCH-LOGICAL-c246t-1f806ed39c6f50307af8861b079c10ae2a17a467472ce5eb8baa386e934dbb873</cites><orcidid>0000-0003-2160-6063</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-018-0527-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-018-0527-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Ravichandiran, C.</creatorcontrib><creatorcontrib>Sakthivelu, A.</creatorcontrib><creatorcontrib>Deva Arun Kumar, K.</creatorcontrib><creatorcontrib>Davidprabu, R.</creatorcontrib><creatorcontrib>Valanarasu, S.</creatorcontrib><creatorcontrib>Kathalingam, A.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Shkir, Mohd</creatorcontrib><creatorcontrib>Algarni, H.</creatorcontrib><creatorcontrib>AlFaify, S.</creatorcontrib><title>Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Herein, we report samarium (Sm) dopant concentration effect on Cu
2
O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu
2
O films have polycrystalline cubic structure with (
111
) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu
2
O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm
−1
which conformed the Cu
2
O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu
2
O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu
2
O films was increased along with the increase in dopant material concentration.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper oxides</subject><subject>Dopants</subject><subject>Doping</subject><subject>Luminous intensity</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronics</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photoluminescence</subject><subject>Photosensitivity</subject><subject>Pinholes</subject><subject>Preferred orientation</subject><subject>Raman spectroscopy</subject><subject>Rare earth elements</subject><subject>Samarium</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kE1LxDAQQIMouK7-AG8BL4pE89Em6VEWPxYW9qCCt5C2k90ubVOT7MF_b5cuePI0l_dmhofQNaMPjFL1GBnVeUYo04TmXBF5gmYsV4Jkmn-dohktckWynPNzdBHjjlIqM6FnKC571-6hrwB7h4MNgMGGtMWdTRAa2-Lb907c3-HaD02_wb7HaQt4CH6AkBqIBw1aqFLwNQw-NglqvNjzNXZN20XsfMB-SP7I9E0VL9GZs22Eq-Oco8-X54_FG1mtX5eLpxWpeCYTYU5TCbUoKulyKqiyTmvJSqqKilEL3DJlM6kyxSvIodSltUJLKERWl6VWYo5upr3jt997iMns_D7040nDWS600AXnI8Umqgo-xgDODKHpbPgxjJpDWzO1NWNbc2hr5OjwyYkj228g_G3-X_oFZVp85g</recordid><startdate>20190201</startdate><enddate>20190201</enddate><creator>Ravichandiran, C.</creator><creator>Sakthivelu, A.</creator><creator>Deva Arun Kumar, K.</creator><creator>Davidprabu, R.</creator><creator>Valanarasu, S.</creator><creator>Kathalingam, A.</creator><creator>Ganesh, V.</creator><creator>Shkir, Mohd</creator><creator>Algarni, H.</creator><creator>AlFaify, S.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-2160-6063</orcidid></search><sort><creationdate>20190201</creationdate><title>Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics</title><author>Ravichandiran, C. ; Sakthivelu, A. ; Deva Arun Kumar, K. ; Davidprabu, R. ; Valanarasu, S. ; Kathalingam, A. ; Ganesh, V. ; Shkir, Mohd ; Algarni, H. ; AlFaify, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-1f806ed39c6f50307af8861b079c10ae2a17a467472ce5eb8baa386e934dbb873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper oxides</topic><topic>Dopants</topic><topic>Doping</topic><topic>Luminous intensity</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronics</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photoluminescence</topic><topic>Photosensitivity</topic><topic>Pinholes</topic><topic>Preferred orientation</topic><topic>Raman spectroscopy</topic><topic>Rare earth elements</topic><topic>Samarium</topic><topic>Spectrum analysis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ravichandiran, C.</creatorcontrib><creatorcontrib>Sakthivelu, A.</creatorcontrib><creatorcontrib>Deva Arun Kumar, K.</creatorcontrib><creatorcontrib>Davidprabu, R.</creatorcontrib><creatorcontrib>Valanarasu, S.</creatorcontrib><creatorcontrib>Kathalingam, A.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Shkir, Mohd</creatorcontrib><creatorcontrib>Algarni, H.</creatorcontrib><creatorcontrib>AlFaify, S.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ravichandiran, C.</au><au>Sakthivelu, A.</au><au>Deva Arun Kumar, K.</au><au>Davidprabu, R.</au><au>Valanarasu, S.</au><au>Kathalingam, A.</au><au>Ganesh, V.</au><au>Shkir, Mohd</au><au>Algarni, H.</au><au>AlFaify, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-02-01</date><risdate>2019</risdate><volume>30</volume><issue>3</issue><spage>2530</spage><epage>2537</epage><pages>2530-2537</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Herein, we report samarium (Sm) dopant concentration effect on Cu
2
O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu
2
O films have polycrystalline cubic structure with (
111
) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu
2
O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm
−1
which conformed the Cu
2
O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu
2
O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu
2
O films was increased along with the increase in dopant material concentration.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-018-0527-6</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-2160-6063</orcidid></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Copper oxides Dopants Doping Luminous intensity Materials Science Optical and Electronic Materials Optoelectronics Photoelectric effect Photoelectric emission Photoluminescence Photosensitivity Pinholes Preferred orientation Raman spectroscopy Rare earth elements Samarium Spectrum analysis Thin films |
| title | Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics |
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