Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics

Herein, we report samarium (Sm) dopant concentration effect on Cu 2 O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu 2 O films have polycrystalline cubic structure with ( 111 ) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu 2 O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm −1 which conformed the Cu 2 O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu 2 O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu 2 O films was increased along with the increase in dopant material concentration.