A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. I...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Instruments and experimental techniques (New York) 2018-11, Vol.61 (6), p.769-771
Hauptverfasser: Hrubčín, L., Gurov, Yu. B., Zaťko, B., Ivanov, O. M., Mitrofanov, S. V., Rozov, S. V., Sandukovsky, V. G., Semin, V. A., Skuratov, V. A.
Format: Artikel
Sprache:eng
Schlagworte:
Cyclotrons
Detectors
Electrical Engineering
Fluxes
Ion beams
Measurement Science and Instrumentation
Nuclear Experimental Technique
Nuclear reactions
Nuclear research
Physical Chemistry
Physics
Physics and Astronomy
Sensors
Silicon carbide
Xenon
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector.
ISSN:0020-4412
1608-3180
DOI:10.1134/S0020441218060192